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Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy 会议论文
Solid State Lighting and Solar Energy Technologies, Beijing, China, November 12, 2007 - November 14, 2007
Authors:  Liu L;  Chen NF(陈诺夫);  Gao FB;  Yin ZQ;  Cui M;  Bai YM;  Zhang XW
View  |  Adobe PDF(370Kb)  |  Favorite  |  View/Download：194/62  |  Submit date：2017/06/01
Gainassb  Gasb  Lpe  Segregation Coefficient  Thermophotovoltaic Cell  
Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy 期刊论文
Journal of Applied Physics, 2008
Authors:  Gao FB;  Chen NF(陈诺夫);  Zhang XW;  Wang Y;  Liu L(刘蕾);  Yin ZG;  Wu JL
Adobe PDF(352Kb)  |  Favorite  |  View/Download：694/118  |  Submit date：2009/08/03
Molecular-beam Epitaxy  
Net-like Ferromagnetic Mnsb Film Deposited on Porous Silicon Substrates 期刊论文
Journal of Crystal Growth, 2007, 卷号: 299, 期号: 1, 页码: 142-145
Authors:  Dai RX;  Chen NF(陈诺夫);  Zhang XW;  Dai, RX (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(270Kb)  |  Favorite  |  View/Download：790/184  |  Submit date：2007/06/15
On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method 期刊论文
Journal of Crystal Growth, 2007, 卷号: 305, 期号: 1, 页码: 296-301
Authors:  Yin ZG;  Chen NF(陈诺夫);  Dai RX(戴瑞烜);  Liu L;  Zhang XW;  Wang XH;  Wu JL;  Chai CL;  Yin, ZG (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(719Kb)  |  Favorite  |  View/Download：1026/226  |  Submit date：2009/08/03
Nanostructures  Physical Vapor Deposition Processes  Zno  Semiconducting Materials  Thin-films  Optical-properties  Vapor-deposition  Growth-mechanism  Nanowires  Nanosheets  Sapphire  Emission  
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
Authors:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(337Kb)  |  Favorite  |  View/Download：951/271  |  Submit date：2009/08/03
Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices