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Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method 期刊论文
CRYSTALS, 2024, 卷号: 14, 期号: 2, 页码: 11
Authors:  Zhang, Yu;  Wen, Xin;  Chen, Nuofu;  Zhang, Fang;  Chen, Jikun;  Hu WR(胡文瑞)
Favorite  |  View/Download：29/0  |  Submit date：2024/04/02
numerical simulation  SiC  single crystal growth  heat transfer  fluid flow  
4H-SiC贯穿型位错及其密度分布的表征方法优化 期刊论文
半导体技术, 2023, 卷号: 48, 期号: 11, 页码: 977-984
Authors:  章宇;  陈诺夫;  张芳;  余雯静;  胡文瑞;  陈吉堃
Adobe PDF(1791Kb)  |  Favorite  |  View/Download：88/24  |  Submit date：2024/01/11
SiC  湿法腐蚀  贯穿型位错  位错密度  位错缺陷分布