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Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy 会议论文
Solid State Lighting and Solar Energy Technologies, Beijing, China, November 12, 2007 - November 14, 2007
Authors:  Liu L;  Chen NF(陈诺夫);  Gao FB;  Yin ZQ;  Cui M;  Bai YM;  Zhang XW
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Gainassb  Gasb  Lpe  Segregation Coefficient  Thermophotovoltaic Cell  
Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy 期刊论文
Journal of Applied Physics, 2008
Authors:  Gao FB;  Chen NF(陈诺夫);  Zhang XW;  Wang Y;  Liu L(刘蕾);  Yin ZG;  Wu JL
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Molecular-beam Epitaxy  
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
Authors:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
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Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices  
Liquid-Phase-Epitaxy-Grown Inasxsb1-X/Gaas for Room-Temperature 8-12 Mu M Infrared Detectors 期刊论文
Applied Physics Letters, 2006, 卷号: 68, 期号: 24, 页码: 242108
Authors:  Peng CT;  Chen NF(陈诺夫);  Gao FB;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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