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Quantum Efficiency And Temperature Coefficients Of Gainp/Gaas Dual-Junction Solar Cell 期刊论文
Science in China Series E-Technological Sciences, 2009, 卷号: 52, 期号: 5, 页码: 1176-1180
Authors:  Liu L(刘蕾);  Chen NF(陈诺夫);  Bai YM(白一鸣);  Cui M;  Zhang H;  Gao FB;  Yin ZG;  Zhang XW;  Liu L
Adobe PDF(197Kb)  |  Favorite  |  View/Download：1203/303  |  Submit date：2009/08/03
Quantum Efficiency  Temperature Coefficient  Solar Cell  
Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy 期刊论文
Journal of Applied Physics, 2008
Authors:  Gao FB;  Chen NF(陈诺夫);  Zhang XW;  Wang Y;  Liu L(刘蕾);  Yin ZG;  Wu JL
Adobe PDF(352Kb)  |  Favorite  |  View/Download：662/112  |  Submit date：2009/08/03
Molecular-beam Epitaxy  
Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy 会议论文
Solid State Lighting and Solar Energy Technologies, Beijing, China, November 12, 2007 - November 14, 2007
Authors:  Liu L;  Chen NF(陈诺夫);  Gao FB;  Yin ZQ;  Cui M;  Bai YM;  Zhang XW
View  |  Adobe PDF(370Kb)  |  Favorite  |  View/Download：176/58  |  Submit date：2017/06/01
Gainassb  Gasb  Lpe  Segregation Coefficient  Thermophotovoltaic Cell  
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
Authors:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(337Kb)  |  Favorite  |  View/Download：933/266  |  Submit date：2009/08/03
Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices