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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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微重力重点实验室 [1]
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姜燕妮 [1]
陈启生 [1]
颜君毅 [1]
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Patent [1]
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2015 [1]
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中文 [1]
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Creator：陈启生
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Author：陈启生
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一种籽晶温度梯度方法生长碳化硅单晶的装置
专利
发明专利. 一种籽晶温度梯度方法生长碳化硅单晶的装置, 专利号: ZL201210169399.7, 申请日期: 2012-05-28, 授权日期: 2015-11-04
Inventors:
陈启生
;
颜君毅
;
姜燕妮
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Submit date：2015/11/09
