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InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
作者:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(337Kb)  |  收藏  |  浏览/下载：919/263  |  提交时间：2009/08/03
Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices  
Investigation of Mn-Implanted n-Si by Low-Energy Ion Beam Deposition 期刊论文
Journal of Crystal Growth, 2005, 卷号: 273, 期号: 3-4, 页码: 458-463
作者:  Liu LF;  Chen NF(陈诺夫);  Song SL;  Yin ZG;  Yang F;  Chai CL;  Yang SY;  Liu ZK;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(278Kb)  |  收藏  |  浏览/下载：873/177  |  提交时间：2007/06/15
Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD) 期刊论文
Journal of Crystal Growth, 2004, 卷号: 270, 期号: 1-2, 页码: 21-29
作者:  Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Li YL;  Chen NF(陈诺夫);  Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
Adobe PDF(461Kb)  |  收藏  |  浏览/下载：695/169  |  提交时间：2009/08/03
Auger Electron Spectroscopy  Atomic Force Microscopy  Crystal Structures  X-ray Photoelectron Spectroscopy  Ion-beam Deposition  Oxides  4d Photoemission  High-resolution  Thin-films  Silicon  System  Gd2o3  Y2o3  
Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy 期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 1-2, 页码: 50-53
作者:  Chen CL;  Chen NF(陈诺夫);  Liu LF;  Li YL;  Wu JL;  Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(117Kb)  |  收藏  |  浏览/下载：675/158  |  提交时间：2009/08/03
X-ray Diffraction  Liquid Phase Epitaxy  Semiconducting Ternary Compounds  
(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit 期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 3-4, 页码: 451-455
作者:  Song SL;  Chen NF(陈诺夫);  Zhou JP;  Li YL;  Chai CL;  Yang SY;  Liu ZK;  Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(589Kb)  |  收藏  |  浏览/下载：1061/192  |  提交时间：2009/08/03
Auger Electron Spectroscopy  X-ray Diffraction  Ion-beam Epitaxy  Gadolinium Compounds  Metal-insulator-transition  Epitaxy  
(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition 期刊论文
Journal of Crystal Growth, 2002, 卷号: 234, 期号: 2-3, 页码: 359-363
作者:  Yang JL;  Chen NF(陈诺夫);  Liu ZK;  Yang SY;  Chai CL;  Liao MY;  He HJ
Adobe PDF(125Kb)  |  收藏  |  浏览/下载：2020/433  |  提交时间：2009/02/17
X-ray Diffraction