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Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy 会议论文
Solid State Lighting and Solar Energy Technologies, Beijing, China, November 12, 2007 - November 14, 2007
作者:  Liu L;  Chen NF(陈诺夫);  Gao FB;  Yin ZQ;  Cui M;  Bai YM;  Zhang XW
浏览  |  Adobe PDF(370Kb)  |  收藏  |  浏览/下载：174/58  |  提交时间：2017/06/01
Gainassb  Gasb  Lpe  Segregation Coefficient  Thermophotovoltaic Cell  
Liquid-Phase-Epitaxy-Grown Inasxsb1-X/Gaas for Room-Temperature 8-12 Mu M Infrared Detectors 期刊论文
Applied Physics Letters, 2006, 卷号: 68, 期号: 24, 页码: 242108
作者:  Peng CT;  Chen NF(陈诺夫);  Gao FB;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(101Kb)  |  收藏  |  浏览/下载：674/193  |  提交时间：2007/06/15
p-type Zn1-xMgxO Films with Sb Doping by Radio-Frequency Magnetron Sputtering 期刊论文
Applied Physics Letters, 2006, 卷号: 89, 期号: 20, 页码: Art.No.202102
作者:  Wang P;  Chen NF(陈诺夫);  Yin ZG;  Dai RX;  Bai YM;  Wang, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(145Kb)  |  收藏  |  浏览/下载：1062/360  |  提交时间：2007/06/15