3D Finite Volume Scheme for Czochralski Single Crystal Growth

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	3D Finite Volume Scheme for Czochralski Single Crystal Growth
	Lu J; Zhang ZB(张自兵); Chen QS(陈启生); Chen QS(陈启生)
会议录名称	Abstracts of the Papers Presented at the Minisymposia Sessions of the Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational MechanicsⅠ
	2004-09-05
页码	320
会议名称	Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics,Sept. 5-10, 2004, Beijing,China
会议日期	Sept. 5-10, 2004
会议地点	Beijing,China
摘要	Czochralski (Cz) technique, which is used for growing single crystals, has dominated the production of single crystals for electronic applications. The Cz growth process involves multiple phases, moving interface and three-dimensional behavior. Much has been done to study these phenomena by means of numerical methods as well as experimental observations. A three-dimensional curvilinear finite volume based algorithm has been developed to model the Cz process. A body-fitted transformation based approach is adopted in conjunction with a multizone adaptive grid generation (MAGG) technique to accurately handle the three-dimensional problems of phase-change in irregular geometries with free and moving surfaces. The multizone adaptive model is used to perform a three-dimensional simulation of the Cz growth of silicon single crystals.Since the phase change interface are irregular in shape and they move in response to the solution, accurate treatment of these interfaces is important from numerical accuracy point of view. The multizone adaptive grid generation (MAGG) is the appropriate scheme for this purpose. Another challenge encountered is the moving and periodic boundary conditions, which is essential to the numerical solution of the governing equations. Special treatments are implemented to impose the periodic boundary condition in a particular direction and to determine the internal boundary position and shape varying with the combination of ambient physicochemical transport process and interfacial dynamics. As indicated above that the applications and processes characterized by multi-phase, moving interfaces and irregular shape render the associated physical phenomena three-dimensional and unsteady. Therefore a generalized 3D model rather than a 2D simulation, in which the governing equations are solved in a general non-orthogonal coordinate system, is constructed to describe and capture the features of the growth process. All this has been implemented and validated by using it to model the low pressure Cz growth of silicon. Accuracy of this scheme is demonstrated by agreement of simulation data with available experimental data. Using the quasi-steady state approximation, it is shown that the flow and temperature fields in the melt under certain operating conditions become asymmetric and unsteady even in the absence of extrinsic sources of asymmetry. Asymmetry in the flow and temperature fields, caused by high shear initiated phenomena, affects the interface shape in the azimuthal direction thus results in the thermal stress distribution in the vicinity, which has serious implications from crystal quality point of view.
语种	英语
文献类型	会议论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/13815
专题	力学所知识产出(1956-2008)
通讯作者	Chen QS(陈启生)
推荐引用方式 GB/T 7714	Lu J,Zhang ZB,Chen QS,et al. 3D Finite Volume Scheme for Czochralski Single Crystal Growth[C]Abstracts of the Papers Presented at the Minisymposia Sessions of the Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational MechanicsⅠ,2004:320.

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