Preliminary-results of gaas single-crystal growth under high gravity conditions

doi:10.1016/0022-0248(92)90206-X

IMECH-IR > 力学所知识产出(1956-2008)

	Preliminary-results of gaas single-crystal growth under high gravity conditions
	Zhong XR; Zhou BJ; Yan QM; Cao FN; Li CJ; Lin LY; Ma WJ; Zheng Y; Tao F; Xue ML(薛明伦); ZHONG, XR (reprint author), CHINESE ACAD SCI,INST SEMICOND,SEMICOND MAT SCI LAB,POB 912,BEIJING 100083,PEOPLES R CHINA.
Source Publication	Journal of Crystal Growth
	1992
Volume	119 Issue:1-2 Pages:74-78
ISSN	0022-0248
Abstract	GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.
DOI	10.1016/0022-0248(92)90206-X
Indexed By	SCI
Language	英语
WOS ID	WOS:A1992HQ52000009
WOS Research Area	Crystallography ; Materials Science ; Physics
WOS Subject	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
Citation statistics	Cited Times:4[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://dspace.imech.ac.cn/handle/311007/39480
Collection	力学所知识产出(1956-2008)
Corresponding Author	ZHONG, XR (reprint author), CHINESE ACAD SCI,INST SEMICOND,SEMICOND MAT SCI LAB,POB 912,BEIJING 100083,PEOPLES R CHINA.
Recommended Citation GB/T 7714	Zhong XR,Zhou BJ,Yan QM,et al. Preliminary-results of gaas single-crystal growth under high gravity conditions[J]. Journal of Crystal Growth,1992,119,1-2,:74-78.
APA	Zhong XR.,Zhou BJ.,Yan QM.,Cao FN.,Li CJ.,...&ZHONG, XR .(1992).Preliminary-results of gaas single-crystal growth under high gravity conditions.Journal of Crystal Growth,119(1-2),74-78.
MLA	Zhong XR,et al."Preliminary-results of gaas single-crystal growth under high gravity conditions".Journal of Crystal Growth 119.1-2(1992):74-78.

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