Preliminary-results of gaas single-crystal growth under high gravity conditions

doi:10.1016/0022-0248(92)90206-X

IMECH-IR > 力学所知识产出(1956-2008)

	Preliminary-results of gaas single-crystal growth under high gravity conditions
	Zhong XR; Zhou BJ; Yan QM; Cao FN; Li CJ; Lin LY; Ma WJ; Zheng Y; Tao F; Xue ML(薛明伦); ZHONG, XR (reprint author), CHINESE ACAD SCI,INST SEMICOND,SEMICOND MAT SCI LAB,POB 912,BEIJING 100083,PEOPLES R CHINA.
发表期刊	Journal of Crystal Growth
	1992
卷号	119 期号:1-2 页码:74-78
ISSN	0022-0248
摘要	GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.
DOI	10.1016/0022-0248(92)90206-X
收录类别	SCI
语种	英语
WOS记录号	WOS:A1992HQ52000009
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/39480
专题	力学所知识产出(1956-2008)
通讯作者	ZHONG, XR (reprint author), CHINESE ACAD SCI,INST SEMICOND,SEMICOND MAT SCI LAB,POB 912,BEIJING 100083,PEOPLES R CHINA.
推荐引用方式 GB/T 7714	Zhong XR,Zhou BJ,Yan QM,et al. Preliminary-results of gaas single-crystal growth under high gravity conditions[J]. Journal of Crystal Growth,1992,119,1-2,:74-78.
APA	Zhong XR.,Zhou BJ.,Yan QM.,Cao FN.,Li CJ.,...&ZHONG, XR .(1992).Preliminary-results of gaas single-crystal growth under high gravity conditions.Journal of Crystal Growth,119(1-2),74-78.
MLA	Zhong XR,et al."Preliminary-results of gaas single-crystal growth under high gravity conditions".Journal of Crystal Growth 119.1-2(1992):74-78.

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