IMECH-IR  > 力学所知识产出(1956-2008)
离子束外延制备GaAs:Gd薄膜
宋书林; 陈诺夫; 周剑平; 尹志岗; 李艳丽; 杨少延; 刘志凯
Source Publication功能材料
2004-06-25
Issue3Pages:336-337
Abstract 室温条件下,用低能离子束外延制备了GaAs∶Gd薄膜,X射线衍射(XRD)结果表明除了GaAs衬底峰没有发现其它新相的衍射峰,并借助于高分辨X射线衍射(HR XRD)进一步分析了晶格常数的变化特点。俄歇电子能谱(AES)分析了样品表面的成分,及元素随深度的分布规律,在60nm深处元素的相对含量发生明显改变,运用原子力显微镜(AFM)揭示了样品表面的形貌特点。
KeywordGaas∶gd薄膜 低能离子束外延 Gaas衬底
Language中文
Funding Organization国家自然科学基金资助项目(60176001) ; 国家重大基础研究计划资助项目(G20000365和G2002CB311905)
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/41954
Collection力学所知识产出(1956-2008)
Corresponding Author宋书林
Recommended Citation
GB/T 7714
宋书林,陈诺夫,周剑平,等. 离子束外延制备GaAs:Gd薄膜[J]. 功能材料,2004(3):336-337.
APA 宋书林.,陈诺夫.,周剑平.,尹志岗.,李艳丽.,...&刘志凯.(2004).离子束外延制备GaAs:Gd薄膜.功能材料(3),336-337.
MLA 宋书林,et al."离子束外延制备GaAs:Gd薄膜".功能材料 .3(2004):336-337.
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