The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

doi:10.1063/1.4867091

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	The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing
	Zhang, YH; Wei, TB; Wang, JX; Lan D(蓝鼎); Chen, Y; Hu, Q; Lu, HX; Li, JM; Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
发表期刊	AIP Advances
	2014-02
卷号	4 期号:2 页码:27123
ISSN	2158-3226
摘要	Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
关键词	Extraction
学科领域	Science & Technology - Other Topics ; Materials Science ; Physics
DOI	10.1063/1.4867091
URL	查看原文
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000332450000023
项目资助者	This work was supported by the National Natural Sciences Foundation of China under Grant 61274040, 61274008 and 51102226, by the National Basic Research Program of China under Grant 2011CB301902, and by the National High Technology Program of China under Grant 2014AA032605.
课题组名称	NML空间材料物理力学
论文分区	Q3
引用统计	被引频次：16[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/48797
专题	微重力重点实验室
通讯作者	Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, YH,Wei, TB,Wang, JX,et al. The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing[J]. AIP Advances,2014,4,2,:27123.
APA	Zhang, YH.,Wei, TB.,Wang, JX.,蓝鼎.,Chen, Y.,...&Wei, TB .(2014).The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing.AIP Advances,4(2),27123.
MLA	Zhang, YH,et al."The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing".AIP Advances 4.2(2014):27123.

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