Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes

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	Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes
	Wei TB; Wu K; Lan D(蓝鼎); Sun B; Zhang YH; Chen Y; Huo ZQ; Hu Q; Wang JX; Zeng YP; Li JM; Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
发表期刊	Aip Advances
	2014-06
卷号	4 期号:6 页码:67119
ISSN	2158-3226
摘要	Large-scale Ag nanodisks (NDs) arrays fabricated using nanospherical-lens lithography (NLL) are embedded in p-GaN layer of an InGaN/GaN light-emitting diode (LED) for generating localized surface plasmon (LSP) coupling with the radiating dipoles in the quantum-well (QWs). Based on the Ag NDs with the controlled surface coverage, LSP leads to the improved crystalline quality of regrowth p-GaN, increased photoluminescence (PL) intensity, reduced PL decay time, and enhanced output power of LED. Compared with the LED without Ag NDs, the optical output power at a current of 350 mA of the LSP-enhanced LEDs with Ag NDs having a distance of 20 and 35 nm to QWs is increased by 26.7% and 31.1%, respectively. The electrical characteristics and optical properties of LEDs with embedded Ag NPs are dependent on the distance of between Ag NPs and QWs region. The LED with Ag NDs array structure is also found to exhibit reduced emission divergence, compared to that without Ag NDs. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
学科领域	Science & Technology - Other Topics ; Materials Science ; Physics
URL	查看原文
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000338995700020
项目资助者	This work was supported by the National Natural Sciences Foundation of China under Grant 61274040, 61274008 and 51102226, the National Basic Research Program of China under Grant 2011CB301902, the National High Technology Program of China under Grant 2014AA032605 and Youth Innovation Promotion Association, Chinese Academy of Sciences.
课题组名称	NML空间材料物理力学
论文分区	Q3
引用统计	被引频次：6[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/49030
专题	微重力重点实验室
通讯作者	Wei, TB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wei TB,Wu K,Lan D,et al. Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes[J]. Aip Advances,2014,4,6,:67119.
APA	Wei TB.,Wu K.,Lan D.,Sun B.,Zhang YH.,...&Wei, TB .(2014).Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes.Aip Advances,4(6),67119.
MLA	Wei TB,et al."Nanospherical-lens lithographical Ag nanodisk arrays embedded in p-GaN for localized surface plasmon-enhanced blue light emitting diodes".Aip Advances 4.6(2014):67119.

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