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Simulations of dislocation density in silicon carbide crystals grown by the PVT-method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6
Authors:  Chen QS(陈启生);  Zhu P(朱鹏);  He M(何蒙)
Adobe PDF(963Kb)  |  Favorite  |  View/Download：491/118  |  Submit date：2020/03/11
Computer simulation  Defects  Heat transfer  Stresses  Growth from vapor  Semiconducting silicon compounds  
Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 303, 期号: 1, 页码: 357-361
Authors:  Chen QS(陈启生);  Yan JY(颜君毅);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
View  |  Adobe PDF(596Kb)  |  Favorite  |  View/Download：261/98  |  Submit date：2016/01/11
Fluid Flows  Growth Models  Growth From Vapor  Single-crystal Growth  Semiconducting Silicon Compounds