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Source Publication:PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
Creator:颜君毅
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Date Issued:2012
Author:陈启生
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Modeling on ammonothermal growth of GaN semiconductor crystals
期刊论文
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2012, 卷号: 58, 期号: 2-3, 页码: 61-73
Authors:
Chen QS(陈启生)
;
Yan JY(颜君毅)
;
Jiang YN(姜燕妮)
;
Li W(李炜)
;
Chen, QS
;
Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China.
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Submit date:2013/01/18
Gan Crystal
Baffle Opening
Ammonothermal Growth
Mass Transfer
Gallium Nitride
Supercritical Ammonia
Single-crystals
Transport
Seed