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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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微重力重点实验室 [1]
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Prasad V [1]
reprint au... [1]
姜燕妮 [1]
陈启生 [1]
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2011 [1]
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Creator：Prasad V
First author
Creator：reprint author
Creator：陈启生
Date Issued：2011
Document Type：会议论文
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Numerical simulation of ammonothermal growth processes of GaN crystals
会议论文
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:
Jiang YN(姜燕妮)
;
Chen QS(陈启生)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Submit date：2012/04/01
Convection
Fluid Flow
Growth Models
Ammonothermal Growth
Gan
