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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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Tuning heterostructures with powder metallurgy for high synergistic strengthening and hetero-deformation induced hardening
期刊论文
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2020, 卷号: 777, 页码: 5
Authors:
Li ZK
;
Fang X T
;
Wang Y F
;
Jiang P
;
Wang J J
;
Liu C M
;
Wu XL(武晓雷)
;
Zhu Y T
;
Koch C C
Adobe PDF(1239Kb)
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Submit date:2020/05/18
Heterogeneous lamella structure
Synergistic strengthening
Hetero-deformation induced hardening
Powder metallurgy
Dimension limit for thermal shock failure
期刊论文
Philosophical Magazine, 2014, 卷号: 94, 期号: 23, 页码: 2647-2655
Authors:
Shao YF(邵颖峰)
;
Liu QN
;
Tian HJ
;
Lin ZK
;
Xu XH
;
Song F(宋凡)
;
Song, F (reprint author), Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech LNM, Beijing 100190, Peoples R China.
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View/Download:649/136
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Submit date:2014/09/02
Thermomechanical
Ceramics
Fracture
Thermal Shock
细长柔性体动力学仿真
会议论文
LHD2012夏季学术研讨会, 吉林延吉, 2012
Authors:
彭世镠
;
郭宗凯
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View/Download:588/202
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Submit date:2014/01/23
细长体
细长柔性体运动
动力学模型
数值模拟
Investigation of Mn-Implanted n-Si by Low-Energy Ion Beam Deposition
期刊论文
Journal of Crystal Growth, 2005, 卷号: 273, 期号: 3-4, 页码: 458-463
Authors:
Liu LF
;
Chen NF(陈诺夫)
;
Song SL
;
Yin ZG
;
Yang F
;
Chai CL
;
Yang SY
;
Liu ZK
;
Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(278Kb)
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View/Download:889/183
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Submit date:2007/06/15
Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition
期刊论文
Journal of Crystal Growth, 2005, 卷号: 279, 期号: 3-4, 页码: 272-275
Authors:
Chen CL
;
Chen NF(陈诺夫)
;
Liu LF
;
Wu JL
;
Liu ZK
;
Yang SY
;
Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(184Kb)
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View/Download:801/217
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Submit date:2007/06/15
Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)
期刊论文
Journal of Crystal Growth, 2004, 卷号: 270, 期号: 1-2, 页码: 21-29
Authors:
Zhou JP
;
Chai CL
;
Yang SY
;
Liu ZK
;
Song SL
;
Li YL
;
Chen NF(陈诺夫)
;
Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
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View/Download:705/173
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Submit date:2009/08/03
Auger Electron Spectroscopy
Atomic Force Microscopy
Crystal Structures
X-ray Photoelectron Spectroscopy
Ion-beam Deposition
Oxides
4d Photoemission
High-resolution
Thin-films
Silicon
System
Gd2o3
Y2o3
The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N
期刊论文
Journal of Crystal Growth, 2004, 卷号: 262, 期号: 1-4, 页码: 287-289
Authors:
Zhang FQ(张富强)
;
Chen NF(陈诺夫)
;
Liu XL
;
Liu ZK
;
Yang SY
;
Chai CL
;
Zhang, FQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(168Kb)
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Submit date:2009/08/03
X-ray Diffraction
Ion Beam depositIon
Gan/al2o3
Ferromagnetic Materials
Implanted Gan
Injection
Mn implanted GaAs by low energy ion beam deposition
期刊论文
Journal of Crystal Growth, 2004, 卷号: 264, 期号: 1-3, 页码: 31-35
Authors:
Song SL
;
Chen NF(陈诺夫)
;
Zhou JP
;
Yin ZG
;
Li YL
;
Yang SY
;
Liu ZK
;
Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(297Kb)
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View/Download:637/140
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Submit date:2009/08/03
X-ray Diffraction
Ion Beam Deposit
Magnetic Materials
Semiconducting Gallium Arsenide
Curie-temperature
Semiconductors
Ferromagnetism
System
Mn)As
(Ga
Gan
(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit
期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 3-4, 页码: 451-455
Authors:
Song SL
;
Chen NF(陈诺夫)
;
Zhou JP
;
Li YL
;
Chai CL
;
Yang SY
;
Liu ZK
;
Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(589Kb)
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View/Download:1075/198
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Submit date:2009/08/03
Auger Electron Spectroscopy
X-ray Diffraction
Ion-beam Epitaxy
Gadolinium Compounds
Metal-insulator-transition
Epitaxy
(Ga,Mn,N) Compounds Growth with Mass-Analyzed Low Energy Dual Ion Beam Deposition
期刊论文
Journal of Crystal Growth, 2003, 卷号: 252, 期号: 1-3, 页码: 202-207
Authors:
Zhang FQ(张富强)
;
Chen NF(陈诺夫)
;
Liu XL
;
Liu ZK
;
Yang SY
;
Chai CL
Adobe PDF(133Kb)
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View/Download:1647/293
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Submit date:2007/06/15