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SiC晶体生长中流场的优化设计
Alternative TitleOPTIMIZATION OF THE FLOW FIELD IN SIC CRYSTAL GROWTH
颜君毅; 陈启生; 姜燕妮; 李炜
Source Publication工程热物理学报
2011-02-15
Volume32Issue:2Pages:308-311
ISSN0253-231X
Abstract物理气相输运法(PVT)是实验室最为常见的碳化硅(SiC)大块单晶生长方法. 本文在碳化硅晶体生长模型化研究中, 针对碳化硅单晶PVT生长过程中的传热传质等现象引入了对流传热中的场协同原理, 利用这一原理对生长室内的流场温度场进行了优化, 并对改良前后分别进行了数值模拟, 研究了该原理对晶体生长的影响. 实验室碳化硅单晶的生长成功率从优化设计前的30%提高到90%
Other AbstractSiC crystal is usually got by physical vapor transport(PVT) method in the lab.In this paper,a field-coordination theory was involved to optimize the SiC PVT growth system.We changed the parameters in the graphite crucible and calculated the flow field as well as species concentration field before and after optimization,using a finite volume-based software package developed by ourselves.We improved the design by analyzing the numerical results and the success ratio of SiC PVT experiment had increased from 30%to 90%. 
Keyword碳化硅晶体 Pvt法 场协同 浓度场 流场
Subject Area力学
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Indexed ByEI ; CSCD
Language中文
Funding Organization国家自然科学基金资助项目(No.50890182)
CSCD IDCSCD:4125206
DepartmentNML流动稳定性与复杂流动
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Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/45114
Collection国家微重力实验室
Corresponding Author颜君毅
Recommended Citation
GB/T 7714
颜君毅,陈启生,姜燕妮,等. SiC晶体生长中流场的优化设计[J]. 工程热物理学报,2011,32(2):308-311.
APA 颜君毅,陈启生,姜燕妮,&李炜.(2011).SiC晶体生长中流场的优化设计.工程热物理学报,32(2),308-311.
MLA 颜君毅,et al."SiC晶体生长中流场的优化设计".工程热物理学报 32.2(2011):308-311.
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