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Modeling on ammonothermal growth of GaN semiconductor crystals
Chen QS(陈启生); Yan JY(颜君毅); Jiang YN(姜燕妮); Li W(李炜); Chen, QS; Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China.
Source PublicationPROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
2012-06-15
Volume58Issue:2-3Pages:61-73
ISSN0960-8974
AbstractAmmonothermal systems are modeled using fluid dynamics and heat and mass transfer models. The nutrient is considered as a porous media bed and the flow is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite volume method. The effects of baffle design on flow pattern, heat and mass transfer in an autoclave are analyzed. For the research-grade autoclave with an internal diameter of 2.22 cm, the constraint for the GaN growth is found to be the growth kinetics and the total area of seed surfaces in the case of baffle opening of 10% (including the central opening of 5% and ring opening of 5%). The fluid flow across the baffle is a clockwise circulating flow which goes upwards in the central hole and downwards in the ring gap. Transport phenomena have been also studied in large-size ammonothermal growth systems with internal diameters of 4.44 cm and 10 cm. The flow pattern across the baffle changes to an anticlockwise circulating flow which goes upwards in the ring gap and downwards in the central hole in the case of 10% baffle opening. Since ammonothermal growth experiments are expensive and time-consuming, modeling becomes an effective tool for research and optimization of the ammonothermal growth processes.
KeywordGan Crystal Baffle Opening Ammonothermal Growth Mass Transfer Gallium Nitride Supercritical Ammonia Single-crystals Transport Seed
Subject Area流体力学
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Indexed BySCI ; EI
Language英语
WOS IDWOS:000306029000001
Funding OrganizationThe project supported by the National Science Foundation of China (10972226, 50776098).
DepartmentNML流动稳定性与复杂流动
ClassificationQ3
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Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/46592
Collection国家微重力实验室
Corresponding AuthorChen, QS; Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China.
Recommended Citation
GB/T 7714
Chen QS,Yan JY,Jiang YN,et al. Modeling on ammonothermal growth of GaN semiconductor crystals[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS,2012,58(2-3):61-73.
APA 陈启生,颜君毅,姜燕妮,李炜,Chen, QS,&Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China..(2012).Modeling on ammonothermal growth of GaN semiconductor crystals.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS,58(2-3),61-73.
MLA 陈启生,et al."Modeling on ammonothermal growth of GaN semiconductor crystals".PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS 58.2-3(2012):61-73.
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