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Numerical simulation of ammonothermal growth processes of GaN crystals 期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 411-414
Authors:  Jiang YN(姜燕妮);  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Convection  Fluid Flow  Growth Models  Ammonothermal Growth  Gan  Single-crystals  Gallium Nitride  Heat-transfer  Fluid-flow  
Proper orthogonal decomposition of oscillatory Marangoni flow in half-zone liquid bridges of low-Pr fluids 期刊论文
Journal of Crystal Growth, 2007, 卷号: 307, 期号: 1, 页码: 155-170
Authors:  Li K(李凯);  Imaishi N;  Jing CJ;  Yoda S;  Imaishi, N (reprint author), Kyushu Univ, Inst Mat Chem & Engn, 6-1 Kasugakoen, Kasuga, Fukuoka 8168580, Japan.
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Computer Simulation  Fluid Flows  Half-zone Liquid Bridge  Marangoni Flow  Oscillatory Flow  Microgravity Condition  Low-prandtl Number Fluid  3-dimensional Numerical-simulation  Thermal-convection  Dynamical Models  Instabilities  
Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport 期刊论文
Journal of Crystal Growth, 2006, 卷号: 296, 期号: 0, 页码: 150-158
Authors:  Pendurti S;  Chen QS(陈启生);  Prasad V;  Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
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Modeling of Ammonothermal Growth of Nitrides 期刊论文
Journal of Crystal Growth, 2003, 卷号: 258, 页码: 181-187
Authors:  Chen QS(陈启生);  Prasad V.;  Hu WR(胡文瑞);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Concentration distribution in solution crystal growth: effect of moving interface conditions 期刊论文
Journal of Crystal Growth, 1999, 卷号: 203, 期号: 1-2, 页码: 227-233
Authors:  Wang W(王伟);  Hu WR(胡文瑞);  Wang, W (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
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