| Numerical simulation of ammonothermal growth processes of GaN crystals |
| Jiang YN(姜燕妮); Chen QS(陈启生) ; Prasad V; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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| 发表期刊 | Journal of Crystal Growth
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| 2011
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| 卷号 | 318期号:1页码:411-414 |
| ISSN | 0022-0248
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| 摘要 | Gallium nitride (GaN) is a semiconductor material with a wide array of applications in the manufacture of blue/green light LEDs, lasers and high power electronic devices. In the ammonothermal growth, ammonia is used as a solvent instead of water as in the hydrothermal process. We modeled ammonothermal growth of GaN crystal of 1 in. size in a cylindrical high-pressure autoclave and discussed the effects of the different baffle design. We can conclude that, under the condition of forward solubility, the small opening is not in favor of the crystal growth. When the opening increases from 12% to 16%, the flow direction in the central hole changes from positive to negative. In the cases of 16% and 20% openings the flow in the autoclave exhibits a steady circulation, so the growth is stable. The transfer of raw material depends on the baffle opening and the temperature difference between growth zone and dissolving zone. (C) 2010 Elsevier B.V. All rights reserved. |
| 关键词 | Convection
Fluid Flow
Growth Models
Ammonothermal Growth
Gan
Single-crystals
Gallium Nitride
Heat-transfer
Fluid-flow
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| 学科领域 | Crystallography
; Materials Science
; Physics
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| DOI | 10.1016/j.jcrysgro.2010.10.218
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| URL | 查看原文
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| 收录类别 | SCI
; EI
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| 语种 | 英语
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| WOS记录号 | WOS:000289653900085
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| 关键词[WOS] | SINGLE-CRYSTALS
; GALLIUM NITRIDE
; HEAT-TRANSFER
; FLUID-FLOW
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| WOS研究方向 | Crystallography
; Materials Science
; Physics
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| WOS类目 | Crystallography
; Materials Science, Multidisciplinary
; Physics, Applied
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| 课题组名称 | NML流动稳定性与复杂流动
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| 论文分区 | 二类/Q2
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://dspace.imech.ac.cn/handle/311007/45096
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| 专题 | 微重力重点实验室
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| 通讯作者 | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China |
推荐引用方式
GB/T 7714 |
Jiang YN,Chen QS,Prasad V,et al. Numerical simulation of ammonothermal growth processes of GaN crystals[J]. Journal of Crystal Growth,2011,318,1,:411-414.
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| APA |
姜燕妮,陈启生,Prasad V,&Chen, QS .(2011).Numerical simulation of ammonothermal growth processes of GaN crystals.Journal of Crystal Growth,318(1),411-414.
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| MLA |
姜燕妮,et al."Numerical simulation of ammonothermal growth processes of GaN crystals".Journal of Crystal Growth 318.1(2011):411-414.
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