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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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力学所知识产出(19... [1]
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Indexed By：EI
Source Publication：Journal of Crystal Growth
Creator：Lu J
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Creator：Wei GD
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Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
Authors:
Chen QS(陈启生)
;
Lu J
;
Zhang ZB(张自兵)
;
Wei GD
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Submit date：2007/06/15
Growth Models
X-ray Diffraction
Growth From Vapor
Single Crystal Growth
Silicon Carbide
