IMECH-IR  > 力学所知识产出(1956-2008)
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
Chen QS(陈启生); Lu J; Zhang ZB(张自兵); Wei GD; Prasad V; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Source PublicationJournal of Crystal Growth
2006
Volume292Issue:2Pages:197-200
ISSN0022-0248
AbstractSilicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.
KeywordGrowth Models X-ray Diffraction Growth From Vapor Single Crystal Growth Silicon Carbide
Subject Area力学
DOI10.1016/j.jcrysgro.2006.04.008
Indexed BySCI ; EI
Language英语
WOS IDWOS:000239481000006
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
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Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/16331
Collection力学所知识产出(1956-2008)
Corresponding AuthorChen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Recommended Citation
GB/T 7714
Chen QS,Lu J,Zhang ZB,et al. Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization[J]. Journal of Crystal Growth,2006,292(2):197-200.
APA Chen QS,Lu J,Zhang ZB,Wei GD,Prasad V,&Chen, QS .(2006).Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization.Journal of Crystal Growth,292(2),197-200.
MLA Chen QS,et al."Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization".Journal of Crystal Growth 292.2(2006):197-200.
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