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| Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization | |
Chen QS(陈启生) ; Lu J; Zhang ZB(张自兵); Wei GD; Prasad V; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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| Source Publication | Journal of Crystal Growth
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| 2006 | |
| Volume | 292Issue:2Pages:197-200 |
| ISSN | 0022-0248 |
| Abstract | Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures. |
| Keyword | Growth Models X-ray Diffraction Growth From Vapor Single Crystal Growth Silicon Carbide |
| Subject Area | 力学 |
| DOI | 10.1016/j.jcrysgro.2006.04.008 |
| Indexed By | SCI ; EI |
| Language | 英语 |
| WOS ID | WOS:000239481000006 |
| WOS Research Area | Crystallography ; Materials Science ; Physics |
| WOS Subject | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://dspace.imech.ac.cn/handle/311007/16331 |
| Collection | 力学所知识产出(1956-2008) |
| Corresponding Author | Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China. |
| Recommended Citation GB/T 7714 | Chen QS,Lu J,Zhang ZB,et al. Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization[J]. Journal of Crystal Growth,2006,292,2,:197-200. |
| APA | Chen QS,Lu J,Zhang ZB,Wei GD,Prasad V,&Chen, QS .(2006).Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization.Journal of Crystal Growth,292(2),197-200. |
| MLA | Chen QS,et al."Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization".Journal of Crystal Growth 292.2(2006):197-200. |
| Files in This Item: | Download All | |||||
| File Name/Size | DocType | Version | Access | License | ||
| 152326.pdf（228KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | View Download | |
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