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Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 303, 期号: 1, 页码: 357-361
Authors:  Chen QS(陈启生);  Yan JY(颜君毅);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
View  |  Adobe PDF(596Kb)  |  Favorite  |  View/Download：237/89  |  Submit date：2016/01/11
Fluid Flows  Growth Models  Growth From Vapor  Single-crystal Growth  Semiconducting Silicon Compounds  
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
Authors:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
View  |  Adobe PDF(228Kb)  |  Favorite  |  View/Download：802/231  |  Submit date：2007/06/15
Growth Models  X-ray Diffraction  Growth From Vapor  Single Crystal Growth  Silicon Carbide