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Simulations of dislocation density in silicon carbide crystals grown by the PVT-method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6
Authors:  Chen QS(陈启生);  Zhu P(朱鹏);  He M(何蒙)
Adobe PDF(963Kb)  |  Favorite  |  View/Download：471/110  |  Submit date：2020/03/11
Computer simulation  Defects  Heat transfer  Stresses  Growth from vapor  Semiconducting silicon compounds  
Real-time in situ observation of shear modulus evolution during Ostwald ripening of colloidal crystallization 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 502, 页码: 35-40
Authors:  Zhou HW(周宏伟);  Xu SH(徐升华);  Sun ZW(孙祉伟)
View  |  Adobe PDF(873Kb)  |  Favorite  |  View/Download：517/103  |  Submit date：2018/10/30
Colloidal crystal  Crystallization  Ostwald ripening  Shear modulus  
Improvement of the thermal design in the SiC PVT growth process 会议论文
7th International Workshop on Modeling in Crystal Growth, Taipei,TW, China, OCT 28-31, 2012
Authors:  Yan JY(颜君毅);  Chen QS(陈启生);  Jiang YN(姜燕妮);  Zhang H;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
View  |  Adobe PDF(1817Kb)  |  Favorite  |  View/Download：740/216  |  Submit date：2014/02/24
Fluid Flows  Mass Transfer  Growth From Vapor  Semiconducting Silicon Compounds  
Numerical simulation of ammonothermal growth processes of GaN crystals 会议论文
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:  Jiang YN(姜燕妮);  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(511Kb)  |  Favorite  |  View/Download：923/254  |  Submit date：2012/04/01
Convection  Fluid Flow  Growth Models  Ammonothermal Growth  Gan