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Effect of Process Parameters on Defects, Melt Pool Shape, Microstructure, and Tensile Behavior of 316L Stainless Steel Produced by Selective Laser Melting 期刊论文
ACTA METALLURGICA SINICA-ENGLISH LETTERS, 2020, 页码: 16
Authors:  Jiang HZ(蒋华臻);  Li ZY(李正阳);  Feng T;  Wu PY;  Chen QS(陈启生);  Feng YL;  Chen LF;  Hou JY(侯静宇);  Xu HJ
Adobe PDF(6860Kb)  |  Favorite  |  View/Download:414/83  |  Submit date:2020/11/30
Selective laser melting  Defects  Melt pool shape  Primary dendrite spacing  Mechanical properties  316L stainless steel  
Factor analysis of selective laser melting process parameters with normalised quantities and Taguchi method 期刊论文
OPTICS AND LASER TECHNOLOGY, 2019, 卷号: 119, 页码: 11
Authors:  Jiang HZ(蒋华臻);  Li ZY(李正阳);  Feng T;  Wu PY;  Chen QS(陈启生);  Fen YL;  Li SW;  Gao H(高欢);  Xu HJ
Adobe PDF(9815Kb)  |  Favorite  |  View/Download:613/157  |  Submit date:2019/10/21
Additive manufacturing  Parameters optimizing  Dimensionless quantities  Selective laser melting  316L stainless steel  
Modeling on ammonothermal growth of GaN semiconductor crystals 期刊论文
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2012, 卷号: 58, 期号: 2-3, 页码: 61-73
Authors:  Chen QS(陈启生);  Yan JY(颜君毅);  Jiang YN(姜燕妮);  Li W(李炜);  Chen, QS;  Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China.
Adobe PDF(968Kb)  |  Favorite  |  View/Download:1220/415  |  Submit date:2013/01/18
Gan Crystal  Baffle Opening  Ammonothermal Growth  Mass Transfer  Gallium Nitride  Supercritical Ammonia  Single-crystals  Transport  Seed  
Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems 会议论文
2nd International Solvothermal and Hydrothermal-Association Conference (ISHA 2010), Beijing, PEOPLES R CHINA, JUL 27-29, 2010
Authors:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Li W(李炜);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(330Kb)  |  Favorite  |  View/Download:930/209  |  Submit date:2012/04/01
Gan  Ammonothermal Growth  Baffle Opening  Fluid Flow  Thermal Fields  
Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems 期刊论文
Research on Chemical Intermediates, 2011, 卷号: 37, 期号: 2-5, 页码: 467-477
Authors:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Li W(李炜);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(330Kb)  |  Favorite  |  View/Download:871/239  |  Submit date:2012/04/01
Gan  Ammonothermal Growth  Baffle Opening  Fluid Flow  Thermal Fields  Gallium Nitride