IMECH-IR

浏览/检索结果: 共8条,第1-8条 帮助

限定条件            
已选(0)清除 条数/页:   排序方式:
Fracture toughness and adhesion of transparent Al:ZnO films deposited on glass substrates 期刊论文
JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE, 2013, 卷号: 22, 期号: 10, 页码: 3161-3167
作者:  Pang XL;  Ma HJ;  Gao KW;  Yang HS;  Wu XL(武晓雷);  Volinsky A;  Pang, XL (reprint author), Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China.
Adobe PDF(671Kb)  |  收藏  |  浏览/下载:668/283  |  提交时间:2014/01/17
Adhesion  Azo  Fracture Toughness  Transparent Films  Water  
Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems 期刊论文
Research on Chemical Intermediates, 2011, 卷号: 37, 期号: 2-5, 页码: 467-477
作者:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Li W(李炜);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(330Kb)  |  收藏  |  浏览/下载:859/239  |  提交时间:2012/04/01
Gan  Ammonothermal Growth  Baffle Opening  Fluid Flow  Thermal Fields  Gallium Nitride  
Numerical simulation of ammonothermal growth processes of GaN crystals 期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 411-414
作者:  Jiang YN(姜燕妮);  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(511Kb)  |  收藏  |  浏览/下载:717/196  |  提交时间:2012/04/01
Convection  Fluid Flow  Growth Models  Ammonothermal Growth  Gan  Single-crystals  Gallium Nitride  Heat-transfer  Fluid-flow  
Superelastic And Spring Properties Of Si3N4 Microcoils 期刊论文
Advanced Materials, 2008, 页码: 1738-+
作者:  Cao CB;  Du HL;  Xu YJ;  Zhu HS;  Zhang TH(张泰华);  Yang R(杨荣);  Cao, CB (reprint author), Beijing Inst Technol, Res Ctr Mat Sci, Beijing 100081, Peoples R China.
Adobe PDF(204Kb)  |  收藏  |  浏览/下载:871/188  |  提交时间:2009/08/03
Chemical-vapor-deposition  Silicon-nitride  Carbon Nanotubes  Alpha-si3n4  Growth  Nanohelices  Nanosprings  Nanowires  Mechanics  Nanocoils  
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
作者:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(337Kb)  |  收藏  |  浏览/下载:929/266  |  提交时间:2009/08/03
Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices  
Liquid-Phase-Epitaxy-Grown Inasxsb1-X/Gaas for Room-Temperature 8-12 Mu M Infrared Detectors 期刊论文
Applied Physics Letters, 2006, 卷号: 68, 期号: 24, 页码: 242108
作者:  Peng CT;  Chen NF(陈诺夫);  Gao FB;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(101Kb)  |  收藏  |  浏览/下载:674/193  |  提交时间:2007/06/15
Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy 期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 1-2, 页码: 50-53
作者:  Chen CL;  Chen NF(陈诺夫);  Liu LF;  Li YL;  Wu JL;  Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(117Kb)  |  收藏  |  浏览/下载:686/163  |  提交时间:2009/08/03
X-ray Diffraction  Liquid Phase Epitaxy  Semiconducting Ternary Compounds  
Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV 期刊论文
Applied Physics A-Materials Science & Processing, 1998, 卷号: 66, 期号: 5, 页码: 565-567
作者:  Xu ZL(徐自亮);  Xu WJ;  Li L;  Xu, ZL (reprint author), Chinese Acad Sci, Inst Mech, Natl Micrograv Lab China, Beijing 100080, Peoples R China.
Adobe PDF(88Kb)  |  收藏  |  浏览/下载:720/222  |  提交时间:2007/06/15