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Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport 期刊论文
Journal of Crystal Growth, 2006, 卷号: 296, 期号: 0, 页码: 150-158
作者:  Pendurti S;  Chen QS(陈启生);  Prasad V;  Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
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Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 519-522
作者:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Computer Simulation  Growth Model  Mass Transfer  Growth From Vapor  Seed Crystals  Semiconducting Silicon Compounds  
Effects of Induction Heating on Temperature Distribution and Growth Rate in Large-Size SiC Growth System 期刊论文
Journal of Crystal Growth, 2004, 卷号: 266, 期号: 1-3, 页码: 320-326
作者:  Chen QS(陈启生);  Gao P(高鹏);  Hu WR(胡文瑞);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Adobe PDF(401Kb)  |  收藏  |  浏览/下载:778/270  |  提交时间:2007/06/15
Effects of Baffle Design on Fluid Flow and Heat Transfer in Ammonothermal Growth System of Nitrides 期刊论文
Journal of Crystal Growth, 2004, 卷号: 266, 期号: 1-3, 页码: 271-277
作者:  Chen QS(陈启生);  Pendurti S;  Prasad V
Adobe PDF(435Kb)  |  收藏  |  浏览/下载:641/134  |  提交时间:2007/06/15
Modeling of Ammonothermal Growth of Nitrides 期刊论文
Journal of Crystal Growth, 2003, 卷号: 258, 页码: 181-187
作者:  Chen QS(陈启生);  Prasad V.;  Hu WR(胡文瑞);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Numerical simulation of magnetic field design for damping thermocapillary convection in a floating half-zone 期刊论文
Journal of Crystal Growth, 2001, 卷号: 222, 期号: 3, 页码: 677-684
作者:  Li K(李凯);  Hu WR(胡文瑞);  Hu, WR (reprint author), Chinese Acad Sci, Natl Micrograv Lab, Beijing 100080, Peoples R China.
Adobe PDF(474Kb)  |  收藏  |  浏览/下载:598/149  |  提交时间:2007/06/15