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Improvement of the thermal design in the SiC PVT growth process 期刊论文
Journal of Crystal Growth, 2014, 卷号: 385, 页码: 34-37
作者:  Yan JY(颜君毅);  Chen QS(陈启生);  Jiang YN(姜燕妮);  Zhang H;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
Adobe PDF(1817Kb)  |  收藏  |  浏览/下载:603/205  |  提交时间:2014/02/13
Fluid Flows  Mass Transfer  Growth From Vapor  Semiconducting Silicon Compounds  
Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 303, 期号: 1, 页码: 357-361
作者:  Chen QS(陈启生);  Yan JY(颜君毅);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Fluid Flows  Growth Models  Growth From Vapor  Single-crystal Growth  Semiconducting Silicon Compounds