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Simulations of dislocation density in silicon carbide crystals grown by the PVT-method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6
作者:  Chen QS(陈启生);  Zhu P(朱鹏);  He M(何蒙)
Adobe PDF(963Kb)  |  收藏  |  浏览/下载：415/94  |  提交时间：2020/03/11
Computer simulation  Defects  Heat transfer  Stresses  Growth from vapor  Semiconducting silicon compounds  
Improvement of the thermal design in the SiC PVT growth process 期刊论文
Journal of Crystal Growth, 2014, 卷号: 385, 页码: 34-37
作者:  Yan JY(颜君毅);  Chen QS(陈启生);  Jiang YN(姜燕妮);  Zhang H;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
Adobe PDF(1817Kb)  |  收藏  |  浏览/下载：599/202  |  提交时间：2014/02/13
Fluid Flows  Mass Transfer  Growth From Vapor  Semiconducting Silicon Compounds  
Improvement of the thermal design in the SiC PVT growth process 会议论文
7th International Workshop on Modeling in Crystal Growth, Taipei,TW, China, OCT 28-31, 2012
作者:  Yan JY(颜君毅);  Chen QS(陈启生);  Jiang YN(姜燕妮);  Zhang H;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
浏览  |  Adobe PDF(1817Kb)  |  收藏  |  浏览/下载：716/209  |  提交时间：2014/02/24
Fluid Flows  Mass Transfer  Growth From Vapor  Semiconducting Silicon Compounds