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Numerical simulation of ammonothermal growth processes of GaN crystals
Jiang YN(姜燕妮); Chen QS(陈启生); Prasad V; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Source PublicationJournal of Crystal Growth
2011
Volume318Issue:1Pages:411-414
ISSN0022-0248
AbstractGallium nitride (GaN) is a semiconductor material with a wide array of applications in the manufacture of blue/green light LEDs, lasers and high power electronic devices. In the ammonothermal growth, ammonia is used as a solvent instead of water as in the hydrothermal process. We modeled ammonothermal growth of GaN crystal of 1 in. size in a cylindrical high-pressure autoclave and discussed the effects of the different baffle design. We can conclude that, under the condition of forward solubility, the small opening is not in favor of the crystal growth. When the opening increases from 12% to 16%, the flow direction in the central hole changes from positive to negative. In the cases of 16% and 20% openings the flow in the autoclave exhibits a steady circulation, so the growth is stable. The transfer of raw material depends on the baffle opening and the temperature difference between growth zone and dissolving zone. (C) 2010 Elsevier B.V. All rights reserved.
KeywordConvection Fluid Flow Growth Models Ammonothermal Growth Gan Single-crystals Gallium Nitride Heat-transfer Fluid-flow
Subject AreaCrystallography ; Materials Science ; Physics
DOI10.1016/j.jcrysgro.2010.10.218
URL查看原文
Indexed BySCI ; EI
Language英语
WOS IDWOS:000289653900085
WOS KeywordSINGLE-CRYSTALS ; GALLIUM NITRIDE ; HEAT-TRANSFER ; FLUID-FLOW
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
DepartmentNML流动稳定性与复杂流动
Classification二类/Q2
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/45096
Collection国家微重力实验室
Corresponding AuthorChen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Jiang YN,Chen QS,Prasad V,et al. Numerical simulation of ammonothermal growth processes of GaN crystals[J]. Journal of Crystal Growth,2011,318(1):411-414.
APA 姜燕妮,陈启生,Prasad V,&Chen, QS .(2011).Numerical simulation of ammonothermal growth processes of GaN crystals.Journal of Crystal Growth,318(1),411-414.
MLA 姜燕妮,et al."Numerical simulation of ammonothermal growth processes of GaN crystals".Journal of Crystal Growth 318.1(2011):411-414.
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