IMECH-IR  > 国家微重力实验室
Improvement of the thermal design in the SiC PVT growth process
Yan JY(颜君毅); Chen QS(陈启生); Jiang YN(姜燕妮); Zhang H; Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
Source PublicationJournal of Crystal Growth
2014
Volume385Pages:34-37
ISSN0022-0248
AbstractThe physical vapor transport (PVT) method is used to grow silicon carbide (SiC) crystals, which are difficult to be grown by other methods. In this paper, a field-coordination theory is involved to optimize the SiC PVT growth process. By using a finite volume-based computational method, we calculate the flow field as well as species concentration field before and after improvement of the thermal design, respectively. The shape of the SiC crystal grown using the improved thermal design is also shown.
KeywordFluid Flows Mass Transfer Growth From Vapor Semiconducting Silicon Compounds
Subject Area微重力流体力学
DOI10.1016/j.jcrysgro.2013.02.031
URL查看原文
Indexed BySCI ; EI
Language英语
WOS IDWOS:000327250100007
WOS KeywordPHYSICAL-VAPOR TRANSPORT ; CONVECTIVE HEAT-TRANSFER ; SUBLIMATION GROWTH ; BULK GROWTH ; CRYSTALS ; KINETICS ; MODEL
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
Funding OrganizationThe work was supported by the National Natural Science Foundation of China under Grant nos.10972226 and 11272320.
DepartmentNML流动稳定性与复杂流动
Classification二类/Q2
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/48077
Collection国家微重力实验室
Corresponding AuthorChen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
Recommended Citation
GB/T 7714
Yan JY,Chen QS,Jiang YN,et al. Improvement of the thermal design in the SiC PVT growth process[J]. Journal of Crystal Growth,2014,385:34-37.
APA Yan JY,Chen QS,Jiang YN,Zhang H,&Chen, QS .(2014).Improvement of the thermal design in the SiC PVT growth process.Journal of Crystal Growth,385,34-37.
MLA Yan JY,et al."Improvement of the thermal design in the SiC PVT growth process".Journal of Crystal Growth 385(2014):34-37.
Files in This Item: Download All
File Name/Size DocType Version Access License
IMCAS-J2014-005.pdf(1817KB) 开放获取--View Download
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Yan JY(颜君毅)]'s Articles
[Chen QS(陈启生)]'s Articles
[Jiang YN(姜燕妮)]'s Articles
Baidu academic
Similar articles in Baidu academic
[Yan JY(颜君毅)]'s Articles
[Chen QS(陈启生)]'s Articles
[Jiang YN(姜燕妮)]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Yan JY(颜君毅)]'s Articles
[Chen QS(陈启生)]'s Articles
[Jiang YN(姜燕妮)]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: IMCAS-J2014-005.pdf
Format: Adobe PDF
This file does not support browsing at this time
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.