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Numerical simulation of ammonothermal growth processes of GaN crystals 期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 411-414
Authors:  Jiang YN(姜燕妮);  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Convection  Fluid Flow  Growth Models  Ammonothermal Growth  Gan  Single-crystals  Gallium Nitride  Heat-transfer  Fluid-flow  
Proper orthogonal decomposition of oscillatory Marangoni flow in half-zone liquid bridges of low-Pr fluids 期刊论文
Journal of Crystal Growth, 2007, 卷号: 307, 期号: 1, 页码: 155-170
Authors:  Li K(李凯);  Imaishi N;  Jing CJ;  Yoda S;  Imaishi, N (reprint author), Kyushu Univ, Inst Mat Chem & Engn, 6-1 Kasugakoen, Kasuga, Fukuoka 8168580, Japan.
Adobe PDF(5201Kb)  |  Favorite  |  View/Download：900/179  |  Submit date：2009/08/03
Computer Simulation  Fluid Flows  Half-zone Liquid Bridge  Marangoni Flow  Oscillatory Flow  Microgravity Condition  Low-prandtl Number Fluid  3-dimensional Numerical-simulation  Thermal-convection  Dynamical Models  Instabilities  
On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method 期刊论文
Journal of Crystal Growth, 2007, 卷号: 305, 期号: 1, 页码: 296-301
Authors:  Yin ZG;  Chen NF(陈诺夫);  Dai RX(戴瑞烜);  Liu L;  Zhang XW;  Wang XH;  Wu JL;  Chai CL;  Yin, ZG (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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Nanostructures  Physical Vapor Deposition Processes  Zno  Semiconducting Materials  Thin-films  Optical-properties  Vapor-deposition  Growth-mechanism  Nanowires  Nanosheets  Sapphire  Emission  
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
Authors:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
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Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices  
Fabrication and Properties of Sb-Doped ZnO thin Films Grown by Radio Frequency (RF) Magnetron Sputtering 期刊论文
Journal of Crystal Growth, 2006, 卷号: 290, 期号: 1, 页码: 56-60
Authors:  Wang P;  Chen NF(陈诺夫);  Yin ZG;  Yang F;  Peng CT;  Wang, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport 期刊论文
Journal of Crystal Growth, 2006, 卷号: 296, 期号: 0, 页码: 150-158
Authors:  Pendurti S;  Chen QS(陈启生);  Prasad V;  Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
Adobe PDF(337Kb)  |  Favorite  |  View/Download：915/242  |  Submit date：2007/06/15
Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure 期刊论文
Journal of Crystal Growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465
Authors:  Peng CT;  Chen NF(陈诺夫);  Wu JL;  Yin ZG;  Yu YD;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Investigation of Mn-Implanted n-Si by Low-Energy Ion Beam Deposition 期刊论文
Journal of Crystal Growth, 2005, 卷号: 273, 期号: 3-4, 页码: 458-463
Authors:  Liu LF;  Chen NF(陈诺夫);  Song SL;  Yin ZG;  Yang F;  Chai CL;  Yang SY;  Liu ZK;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(278Kb)  |  Favorite  |  View/Download：895/184  |  Submit date：2007/06/15
Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition 期刊论文
Journal of Crystal Growth, 2005, 卷号: 279, 期号: 3-4, 页码: 272-275
Authors:  Chen CL;  Chen NF(陈诺夫);  Liu LF;  Wu JL;  Liu ZK;  Yang SY;  Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD) 期刊论文
Journal of Crystal Growth, 2004, 卷号: 270, 期号: 1-2, 页码: 21-29
Authors:  Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Li YL;  Chen NF(陈诺夫);  Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
Adobe PDF(461Kb)  |  Favorite  |  View/Download：713/175  |  Submit date：2009/08/03
Auger Electron Spectroscopy  Atomic Force Microscopy  Crystal Structures  X-ray Photoelectron Spectroscopy  Ion-beam Deposition  Oxides  4d Photoemission  High-resolution  Thin-films  Silicon  System  Gd2o3  Y2o3