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Knowledge Management System of Institue of Mechanics, CAS
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Source Publication:Journal of Crystal Growth
Document Type:期刊论文
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Numerical simulation of ammonothermal growth processes of GaN crystals
期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 411-414
Authors:
Jiang YN(姜燕妮)
;
Chen QS(陈启生)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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View/Download:738/205
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Submit date:2012/04/01
Convection
Fluid Flow
Growth Models
Ammonothermal Growth
Gan
Single-crystals
Gallium Nitride
Heat-transfer
Fluid-flow
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy
期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
Authors:
Gao FB
;
Chen NF(陈诺夫)
;
Liu L
;
Zhang XW
;
Wu JL
;
Yin ZG
;
Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(337Kb)
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View/Download:946/270
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Submit date:2009/08/03
Crystal Structure
Liquid-phase Epitaxy
Semiconducting Iii-v Materials
Molecular-beam Epitaxy
Transport-properties
Inas1-xsbx
Alloys
Inassb
Insb
Gap
Photoluminescence
Inasxsb1-x/gaas
Superlattices
Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport
期刊论文
Journal of Crystal Growth, 2006, 卷号: 296, 期号: 0, 页码: 150-158
Authors:
Pendurti S
;
Chen QS(陈启生)
;
Prasad V
;
Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
Adobe PDF(337Kb)
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Submit date:2007/06/15
Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure
期刊论文
Journal of Crystal Growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465
Authors:
Peng CT
;
Chen NF(陈诺夫)
;
Wu JL
;
Yin ZG
;
Yu YD
;
Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(268Kb)
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Submit date:2007/06/15
Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)
期刊论文
Journal of Crystal Growth, 2004, 卷号: 270, 期号: 1-2, 页码: 21-29
Authors:
Zhou JP
;
Chai CL
;
Yang SY
;
Liu ZK
;
Song SL
;
Li YL
;
Chen NF(陈诺夫)
;
Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
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Submit date:2009/08/03
Auger Electron Spectroscopy
Atomic Force Microscopy
Crystal Structures
X-ray Photoelectron Spectroscopy
Ion-beam Deposition
Oxides
4d Photoemission
High-resolution
Thin-films
Silicon
System
Gd2o3
Y2o3
Effects of Induction Heating on Temperature Distribution and Growth Rate in Large-Size SiC Growth System
期刊论文
Journal of Crystal Growth, 2004, 卷号: 266, 期号: 1-3, 页码: 320-326
Authors:
Chen QS(陈启生)
;
Gao P(高鹏)
;
Hu WR(胡文瑞)
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Submit date:2007/06/15
Effects of Baffle Design on Fluid Flow and Heat Transfer in Ammonothermal Growth System of Nitrides
期刊论文
Journal of Crystal Growth, 2004, 卷号: 266, 期号: 1-3, 页码: 271-277
Authors:
Chen QS(陈启生)
;
Pendurti S
;
Prasad V
Adobe PDF(435Kb)
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Submit date:2007/06/15
Modeling of Ammonothermal Growth of Nitrides
期刊论文
Journal of Crystal Growth, 2003, 卷号: 258, 页码: 181-187
Authors:
Chen QS(陈启生)
;
Prasad V.
;
Hu WR(胡文瑞)
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Adobe PDF(316Kb)
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Submit date:2007/06/15
Crystal-growth in floating zone with phase-change and thermosolutal convections
期刊论文
Journal of Crystal Growth, 1992, 卷号: 125, 期号: 1-2, 页码: 149-163
Authors:
Xiong B
;
Hu WR(胡文瑞)
;
XIONG, B (reprint author), CHINESE ACAD SCI,INST MECH,15 ZHONG GUAN CUN RD,BEIJING 100080,PEOPLES R CHINA.
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Submit date:2009/08/03
Flow
Gravity