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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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力学所知识产出(19... [3]
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Prasad V [3]
reprint au... [3]
陈启生 [3]
Lu J [2]
张自兵 [2]
Pendurti S [1]
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2006 [3]
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Creator:Prasad V
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Date Issued:2006
Author:陈启生
Community:力学所知识产出(1956-2008)
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Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport
期刊论文
Journal of Crystal Growth, 2006, 卷号: 296, 期号: 0, 页码: 150-158
Authors:
Pendurti S
;
Chen QS(陈启生)
;
Prasad V
;
Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
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View/Download:926/244
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Submit date:2007/06/15
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
Authors:
Chen QS(陈启生)
;
Lu J
;
Zhang ZB(张自兵)
;
Wei GD
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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View/Download:811/232
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Submit date:2007/06/15
Growth Models
X-ray Diffraction
Growth From Vapor
Single Crystal Growth
Silicon Carbide
Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method
期刊论文
Acta Mechanica Sinica, 2006, 卷号: 22, 期号: 1, 页码: 40-45
Authors:
Zhang ZB(张自兵)
;
Lu J
;
Chen QS(陈启生)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(446Kb)
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View/Download:863/219
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Submit date:2007/06/15