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InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
作者:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(337Kb)  |  收藏  |  浏览/下载：921/264  |  提交时间：2009/08/03
Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices  
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
作者:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(228Kb)  |  收藏  |  浏览/下载：771/230  |  提交时间：2007/06/15
Growth Models  X-ray Diffraction  Growth From Vapor  Single Crystal Growth  Silicon Carbide  
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 519-522
作者:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(295Kb)  |  收藏  |  浏览/下载：787/246  |  提交时间：2007/06/15
Computer Simulation  Growth Model  Mass Transfer  Growth From Vapor  Seed Crystals  Semiconducting Silicon Compounds  
Tailoring of dendritic microstructure in solidification processing by crucible vibration 期刊论文
Journal of Crystal Growth, 2005, 卷号: 275, 期号: 1-2, 页码: e1579-e1583
作者:  Nguyen-Thi H;  Reinhart G;  Zhou B;  Billia B;  Liu QS(刘秋生);  Lyubimova TP
Adobe PDF(505Kb)  |  收藏  |  浏览/下载：907/237  |  提交时间：2007/06/15
Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure 期刊论文
Journal of Crystal Growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465
作者:  Peng CT;  Chen NF(陈诺夫);  Wu JL;  Yin ZG;  Yu YD;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：944/235  |  提交时间：2007/06/15
Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD) 期刊论文
Journal of Crystal Growth, 2004, 卷号: 270, 期号: 1-2, 页码: 21-29
作者:  Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Li YL;  Chen NF(陈诺夫);  Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
Adobe PDF(461Kb)  |  收藏  |  浏览/下载：696/170  |  提交时间：2009/08/03
Auger Electron Spectroscopy  Atomic Force Microscopy  Crystal Structures  X-ray Photoelectron Spectroscopy  Ion-beam Deposition  Oxides  4d Photoemission  High-resolution  Thin-films  Silicon  System  Gd2o3  Y2o3  
(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit 期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 3-4, 页码: 451-455
作者:  Song SL;  Chen NF(陈诺夫);  Zhou JP;  Li YL;  Chai CL;  Yang SY;  Liu ZK;  Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(589Kb)  |  收藏  |  浏览/下载：1064/193  |  提交时间：2009/08/03
Auger Electron Spectroscopy  X-ray Diffraction  Ion-beam Epitaxy  Gadolinium Compounds  Metal-insulator-transition  Epitaxy  
Effects of Induction Heating on Temperature Distribution and Growth Rate in Large-Size SiC Growth System 期刊论文
Journal of Crystal Growth, 2004, 卷号: 266, 期号: 1-3, 页码: 320-326
作者:  Chen QS(陈启生);  Gao P(高鹏);  Hu WR(胡文瑞);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Adobe PDF(401Kb)  |  收藏  |  浏览/下载：780/271  |  提交时间：2007/06/15
Effects of Baffle Design on Fluid Flow and Heat Transfer in Ammonothermal Growth System of Nitrides 期刊论文
Journal of Crystal Growth, 2004, 卷号: 266, 期号: 1-3, 页码: 271-277
作者:  Chen QS(陈启生);  Pendurti S;  Prasad V
Adobe PDF(435Kb)  |  收藏  |  浏览/下载：643/135  |  提交时间：2007/06/15
FexSi grown with mass-analyzed low-energy dual ion beam deposition 期刊论文
Journal of Crystal Growth, 2004, 卷号: 263, 期号: 1-4, 页码: 143-147
作者:  Liu LF;  Chen NF(陈诺夫);  Zhang FQ(张富强);  Chen CL;  Li YL;  Yang SY;  Liu Z;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(224Kb)  |  收藏  |  浏览/下载：601/136  |  提交时间：2009/08/03
Auger Electron Spectroscopy  X-ray Diffraction  Ion Beam depositIon  Semiconducting Silicon  Doped Si-mn  Spin-photonics  Thin-films  Silicon  Gas