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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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力学所知识产出(19... [4]
微重力重点实验室 [1]
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陈启生 [5]
Prasad V [3]
Lu J [2]
Pendurti S [2]
张自兵 [2]
Wei GD [1]
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Improvement of the thermal design in the SiC PVT growth process
会议论文
7th International Workshop on Modeling in Crystal Growth, Taipei,TW, China, OCT 28-31, 2012
Authors:
Yan JY(颜君毅)
;
Chen QS(陈启生)
;
Jiang YN(姜燕妮)
;
Zhang H
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
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View/Download:742/217
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Submit date:2014/02/24
Fluid Flows
Mass Transfer
Growth From Vapor
Semiconducting Silicon Compounds
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals
会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
Authors:
Lu J
;
Zhang ZB(张自兵)
;
Chen QS(陈启生)
Adobe PDF(295Kb)
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Submit date:2007/12/18
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
Authors:
Chen QS(陈启生)
;
Lu J
;
Zhang ZB(张自兵)
;
Wei GD
;
Prasad V
Adobe PDF(228Kb)
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Submit date:2007/12/18
Modeling of Ammonothermal Growth of Gallium Nitride Single Crystals
会议论文
6th International Conference on Solvothermal Reactions, AUG 24-27, 2004 Mysore, INDIA
Authors:
Chen QS(陈启生)
;
Pendurti S
;
Prasad V
Adobe PDF(1099Kb)
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Submit date:2007/12/18
Effects of Baffle Design on Fluid Flow and Heat Transfer in Ammonothermal Growth of Nitrides
会议论文
4th International Workshop on Modeling in Crystal Growth, NOV 04-07, 2003 Kyushu, JAPAN
Authors:
Chen QS(陈启生)
;
Pendurti S
;
Prasad V
;
Chen QS(陈启生)
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Submit date:2007/12/18