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Repeatable mechanical energy absorption of ZnO nanopillars 期刊论文
MATERIALS TODAY COMMUNICATIONS, 2021, 卷号: 29, 页码: 8
作者:  Wang J(王军);  Zhou M;  Yang R(杨荣);  Xiao P(肖攀);  Ke FJ(柯孚久);  Lu CS(卢春生)
Adobe PDF(6444Kb)  |  收藏  |  浏览/下载：191/50  |  提交时间：2022/01/12
ZnO nanopillars  Repeatable energy absorption  Phase transformation  Inversion domain boundary  Molecular dynamics  
Simulations of dislocation density in silicon carbide crystals grown by the PVT-method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6
作者:  Chen QS(陈启生);  Zhu P(朱鹏);  He M(何蒙)
Adobe PDF(963Kb)  |  收藏  |  浏览/下载：417/95  |  提交时间：2020/03/11
Computer simulation  Defects  Heat transfer  Stresses  Growth from vapor  Semiconducting silicon compounds  
An overview of healthcare monitoring by flexible electronics 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2018, 卷号: 61, 期号: 9, 页码: Ar-94601
作者:  Hu JQ(胡剑桥);  Li R;  Liu Y;  Su YW(苏业旺)
浏览  |  Adobe PDF(22639Kb)  |  收藏  |  浏览/下载：292/94  |  提交时间：2018/12/12
Flexible Electronics  Stretchable Electronics  Signal Monitoring  Human Healthcare  
Improvement of the thermal design in the SiC PVT growth process 期刊论文
Journal of Crystal Growth, 2014, 卷号: 385, 页码: 34-37
作者:  Yan JY(颜君毅);  Chen QS(陈启生);  Jiang YN(姜燕妮);  Zhang H;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
Adobe PDF(1817Kb)  |  收藏  |  浏览/下载：603/205  |  提交时间：2014/02/13
Fluid Flows  Mass Transfer  Growth From Vapor  Semiconducting Silicon Compounds  
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 519-522
作者:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Adobe PDF(295Kb)  |  收藏  |  浏览/下载：787/246  |  提交时间：2007/06/15
Computer Simulation  Growth Model  Mass Transfer  Growth From Vapor  Seed Crystals  Semiconducting Silicon Compounds  
Effects of Induction Heating on Temperature Distribution and Growth Rate in Large-Size SiC Growth System 期刊论文
Journal of Crystal Growth, 2004, 卷号: 266, 期号: 1-3, 页码: 320-326
作者:  Chen QS(陈启生);  Gao P(高鹏);  Hu WR(胡文瑞);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Adobe PDF(401Kb)  |  收藏  |  浏览/下载：780/271  |  提交时间：2007/06/15