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Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method 期刊论文
CRYSTALS, 2024, 卷号: 14, 期号: 2, 页码: 11
作者:  Zhang, Yu;  Wen, Xin;  Chen, Nuofu;  Zhang, Fang;  Chen, Jikun;  Hu WR(胡文瑞)
收藏  |  浏览/下载：9/0  |  提交时间：2024/04/02
numerical simulation  SiC  single crystal growth  heat transfer  fluid flow  
Modeling on ammonothermal growth of GaN semiconductor crystals 期刊论文
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2012, 卷号: 58, 期号: 2-3, 页码: 61-73
作者:  Chen QS(陈启生);  Yan JY(颜君毅);  Jiang YN(姜燕妮);  Li W(李炜);  Chen, QS;  Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China.
Adobe PDF(968Kb)  |  收藏  |  浏览/下载：1206/411  |  提交时间：2013/01/18
Gan Crystal  Baffle Opening  Ammonothermal Growth  Mass Transfer  Gallium Nitride  Supercritical Ammonia  Single-crystals  Transport  Seed  
Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 303, 期号: 1, 页码: 357-361
作者:  Chen QS(陈启生);  Yan JY(颜君毅);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(596Kb)  |  收藏  |  浏览/下载：212/82  |  提交时间：2016/01/11
Fluid Flows  Growth Models  Growth From Vapor  Single-crystal Growth  Semiconducting Silicon Compounds  
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
作者:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(228Kb)  |  收藏  |  浏览/下载：771/230  |  提交时间：2007/06/15
Growth Models  X-ray Diffraction  Growth From Vapor  Single Crystal Growth  Silicon Carbide