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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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陈启生 [28]
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Instabilities of thermocapillary liquid layers with two free surfaces
期刊论文
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2021, 卷号: 173, 页码: 9
Authors:
Hu KX(胡开鑫)
;
Zhao, Cheng-Zhuo
;
Zhang, Shao-Neng
;
Chen QS(陈启生)
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Submit date:2021/06/15
Elastic-plastic behaviors of silicon carbide crystals
期刊论文
MATERIALS TODAY COMMUNICATIONS, 2021, 卷号: 27, 页码: 9
Authors:
Zhu P(朱鹏)
;
Chen QS(陈启生)
;
Prasad, Vishwanath
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Submit date:2021/09/07
Dislocations
Elastic-plastic material
Finite elements
Simulations of dislocation density in silicon carbide crystals grown by the PVT-method
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6
Authors:
Chen QS(陈启生)
;
Zhu P(朱鹏)
;
He M(何蒙)
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Submit date:2020/03/11
Computer simulation
Defects
Heat transfer
Stresses
Growth from vapor
Semiconducting silicon compounds
Factor analysis of selective laser melting process parameters with normalised quantities and Taguchi method
期刊论文
OPTICS AND LASER TECHNOLOGY, 2019, 卷号: 119, 页码: 11
Authors:
Jiang HZ(蒋华臻)
;
Li ZY(李正阳)
;
Feng T
;
Wu PY
;
Chen QS(陈启生)
;
Fen YL
;
Li SW
;
Gao H(高欢)
;
Xu HJ
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Submit date:2019/10/21
Additive manufacturing
Parameters optimizing
Dimensionless quantities
Selective laser melting
316L stainless steel
Instabilities of thermocapillary flows between counter-rotating disks under microgravity conditions
期刊论文
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2018, 卷号: 117, 页码: 183-187
Authors:
Chen QS(陈启生)
;
He M(何蒙)
;
Zhu P(朱鹏)
;
Hu KX(胡开鑫)
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Submit date:2018/02/08
Improvement of the thermal design in the SiC PVT growth process
期刊论文
Journal of Crystal Growth, 2014, 卷号: 385, 页码: 34-37
Authors:
Yan JY(颜君毅)
;
Chen QS(陈启生)
;
Jiang YN(姜燕妮)
;
Zhang H
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
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Submit date:2014/02/13
Fluid Flows
Mass Transfer
Growth From Vapor
Semiconducting Silicon Compounds
Improvement of the thermal design in the SiC PVT growth process
会议论文
7th International Workshop on Modeling in Crystal Growth, Taipei,TW, China, OCT 28-31, 2012
Authors:
Yan JY(颜君毅)
;
Chen QS(陈启生)
;
Jiang YN(姜燕妮)
;
Zhang H
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
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View/Download:737/216
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Submit date:2014/02/24
Fluid Flows
Mass Transfer
Growth From Vapor
Semiconducting Silicon Compounds
Instabilities of vortex rings generated by surface-tension gradients between co-axial disks
期刊论文
INTERNATIONAL COMMUNICATIONS IN HEAT AND MASS TRANSFER, 2012, 卷号: 39, 期号: 10, 页码: 1542-1545
Authors:
Chen QS(陈启生)
;
Jiang YN(姜燕妮)
;
Chen, QS
;
Chinese Acad Sci, Inst Mech, Key Lab Micrograv, 15 Beisihuan W Rd, Beijing 100190, Peoples R China.
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Submit date:2013/01/18
Modeling on ammonothermal growth of GaN semiconductor crystals
期刊论文
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2012, 卷号: 58, 期号: 2-3, 页码: 61-73
Authors:
Chen QS(陈启生)
;
Yan JY(颜君毅)
;
Jiang YN(姜燕妮)
;
Li W(李炜)
;
Chen, QS
;
Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China.
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View/Download:1224/417
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Submit date:2013/01/18
Gan Crystal
Baffle Opening
Ammonothermal Growth
Mass Transfer
Gallium Nitride
Supercritical Ammonia
Single-crystals
Transport
Seed
Numerical simulation of ammonothermal growth processes of GaN crystals
会议论文
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:
Jiang YN(姜燕妮)
;
Chen QS(陈启生)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(511Kb)
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Submit date:2012/04/01
Convection
Fluid Flow
Growth Models
Ammonothermal Growth
Gan