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Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals 期刊论文
Journal of Rare Earths, 2007, 卷号: 25, 页码: 345-348
作者:  Chen QS(陈启生);  Deng GY(邓谷雨);  Ebadian A;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(374Kb)  |  收藏  |  浏览/下载：753/189  |  提交时间：2009/08/03
Czochralski Growth  Flow Field  Temperature Distributions  Cusp Magnetic Field  
Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 303, 期号: 1, 页码: 357-361
作者:  Chen QS(陈启生);  Yan JY(颜君毅);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(596Kb)  |  收藏  |  浏览/下载：212/82  |  提交时间：2016/01/11
Fluid Flows  Growth Models  Growth From Vapor  Single-crystal Growth  Semiconducting Silicon Compounds  
Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport 期刊论文
Journal of Crystal Growth, 2006, 卷号: 296, 期号: 0, 页码: 150-158
作者:  Pendurti S;  Chen QS(陈启生);  Prasad V;  Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
Adobe PDF(337Kb)  |  收藏  |  浏览/下载：889/239  |  提交时间：2007/06/15
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
作者:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(228Kb)  |  收藏  |  浏览/下载：770/229  |  提交时间：2007/06/15
Growth Models  X-ray Diffraction  Growth From Vapor  Single Crystal Growth  Silicon Carbide  
Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method 期刊论文
Acta Mechanica Sinica, 2006, 卷号: 22, 期号: 1, 页码: 40-45
作者:  Zhang ZB(张自兵);  Lu J;  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(446Kb)  |  收藏  |  浏览/下载：834/212  |  提交时间：2007/06/15
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
作者:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V
Adobe PDF(228Kb)  |  收藏  |  浏览/下载：890/234  |  提交时间：2007/12/18
Modeling of ammonothermal growth of gallium nitride single crystals 期刊论文
Journal of Materials Science, 2005
作者:  Chen QS(陈启生);  Pendurti S;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Adobe PDF(1094Kb)  |  收藏  |  浏览/下载：646/172  |  提交时间：2007/06/15
Modeling of Ammonothermal Growth of Gallium Nitride Single Crystals 会议论文
6th International Conference on Solvothermal Reactions, AUG 24-27, 2004 Mysore, INDIA
作者:  Chen QS(陈启生);  Pendurti S;  Prasad V
Adobe PDF(1099Kb)  |  收藏  |  浏览/下载：658/191  |  提交时间：2007/12/18
Modeling Ammonothermal Growth of GaN Crystals 会议论文
14th International Conference on Crystal Growth (ICCG-14, ICVGE-12),Aug. 9-13, 2004, Grenoble, France
作者:  Pendurti S;  Chen QS(陈启生);  Prasad V
收藏  |  浏览/下载：364/0  |  提交时间：2007/12/18
Effects of Baffle Design on Fluid Flow and Heat Transfer in Ammonothermal Growth System of Nitrides 期刊论文
Journal of Crystal Growth, 2004, 卷号: 266, 期号: 1-3, 页码: 271-277
作者:  Chen QS(陈启生);  Pendurti S;  Prasad V
Adobe PDF(435Kb)  |  收藏  |  浏览/下载：641/134  |  提交时间：2007/06/15