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In Situ Synthesis Of Nanocrystalline Intermetallic Layer During Surface Plastic Deformation Of Zirconium 期刊论文
Surface & Coatings Technology, 2007, 页码: 583-589
作者:  Jiang P(姜萍);  Wei Q;  Hong YS(洪友士);  Lu J;  Wu XL(武晓雷);  Wei, Q (reprint author), Univ N Carolina, Dept Mech Engn & Engn Sci, Charlotte, NC 28223 USA.
Adobe PDF(1021Kb)  |  收藏  |  浏览/下载：833/168  |  提交时间：2009/08/03
Nanocrystalline  Intermetallic Compound  Plastic Deformation  Diffusion  Mechanical Attrition Treatment  Line Profile Analysis  Vacancy Concentration  Triple Junctions  Grain-refinement  Strain  Alloy  Diffusion  Aluminum  Transformation  
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
作者:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(228Kb)  |  收藏  |  浏览/下载：771/230  |  提交时间：2007/06/15
Growth Models  X-ray Diffraction  Growth From Vapor  Single Crystal Growth  Silicon Carbide  
Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method 期刊论文
Acta Mechanica Sinica, 2006, 卷号: 22, 期号: 1, 页码: 40-45
作者:  Zhang ZB(张自兵);  Lu J;  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(446Kb)  |  收藏  |  浏览/下载：838/212  |  提交时间：2007/06/15
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 519-522
作者:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(295Kb)  |  收藏  |  浏览/下载：787/246  |  提交时间：2007/06/15
Computer Simulation  Growth Model  Mass Transfer  Growth From Vapor  Seed Crystals  Semiconducting Silicon Compounds  
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
作者:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生)
Adobe PDF(295Kb)  |  收藏  |  浏览/下载：650/135  |  提交时间：2007/12/18
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
作者:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V
Adobe PDF(228Kb)  |  收藏  |  浏览/下载：891/234  |  提交时间：2007/12/18
Numerical Simulation of Heat Transfer and Kinetics in the Bulk Growth of Silicon Carbide 会议论文
Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics,Sept. 5-10, 2004, Beijing, China
作者:  Zhang ZB(张自兵);  Lu J;  Chen QS(陈启生)
Adobe PDF(301Kb)  |  收藏  |  浏览/下载：825/224  |  提交时间：2007/12/18
Grain Refinement at the Nanoscale Via Mechanical Twinning and Dislocation Interaction in a Nickel-Based Alloy 期刊论文
Journal of Materials Research, 2004, 卷号: 19, 期号: 6, 页码: 1623-1629
作者:  Tao NR;  Wu XL(武晓雷);  Sui ML;  Lu J;  Lu K(卢柯);  Lu, K (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Met Res Inst, Shenyang 110016, Peoples R China.
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：988/357  |  提交时间：2007/06/15