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激光选区熔化成形316L不锈钢工艺、微观组织、力学性能的研究现状 期刊论文
中国激光, 2022, 卷号: 49, 期号: 14, 页码: 309-329
作者:  蒋华臻;  房佳汇钰;  陈启生;  姚少科;  孙辉磊;  候静宇;  胡琦芸;  李正阳
Adobe PDF(5671Kb)  |  收藏  |  浏览/下载：416/39  |  提交时间：2022/08/11
激光技术  增材制造  激光选区熔化  316L不锈钢  非均匀层级结构  力学性能  
Effect of Annealing Temperature and Strain Rate on Mechanical Property of a Selective Laser Melted 316L Stainless Steel 期刊论文
ACTA METALLURGICA SINICA-ENGLISH LETTERS, 2021, 页码: 17
作者:  Jiang HZ(蒋华臻);  Li ZY(李正阳);  Feng T;  Wu PY;  Chen QS(陈启生);  Yao SK(姚少科);  Hou JY(候静宇)
Adobe PDF(9322Kb)  |  收藏  |  浏览/下载：273/26  |  提交时间：2022/01/12
Selective laser melting  316L stainless steel  Heat treatment  Strain hardening behaviors  Mechanical property  
Effect of Process Parameters on Defects, Melt Pool Shape, Microstructure, and Tensile Behavior of 316L Stainless Steel Produced by Selective Laser Melting 期刊论文
ACTA METALLURGICA SINICA-ENGLISH LETTERS, 2020, 页码: 16
作者:  Jiang HZ(蒋华臻);  Li ZY(李正阳);  Feng T;  Wu PY;  Chen QS(陈启生);  Feng YL;  Chen LF;  Hou JY(侯静宇);  Xu HJ
Adobe PDF(6860Kb)  |  收藏  |  浏览/下载：389/77  |  提交时间：2020/11/30
Selective laser melting  Defects  Melt pool shape  Primary dendrite spacing  Mechanical properties  316L stainless steel  
Simulations of dislocation density in silicon carbide crystals grown by the PVT-method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6
作者:  Chen QS(陈启生);  Zhu P(朱鹏);  He M(何蒙)
Adobe PDF(963Kb)  |  收藏  |  浏览/下载：417/95  |  提交时间：2020/03/11
Computer simulation  Defects  Heat transfer  Stresses  Growth from vapor  Semiconducting silicon compounds  
Factor analysis of selective laser melting process parameters with normalised quantities and Taguchi method 期刊论文
OPTICS AND LASER TECHNOLOGY, 2019, 卷号: 119, 页码: 11
作者:  Jiang HZ(蒋华臻);  Li ZY(李正阳);  Feng T;  Wu PY;  Chen QS(陈启生);  Fen YL;  Li SW;  Gao H(高欢);  Xu HJ
浏览  |  Adobe PDF(9815Kb)  |  收藏  |  浏览/下载：592/153  |  提交时间：2019/10/21
Additive manufacturing  Parameters optimizing  Dimensionless quantities  Selective laser melting  316L stainless steel  
Progress In Modeling Of Fluid Flows In Crystal Growth Processes 期刊论文
Progress In Natural Science, 2008, 页码: 1465-1473
作者:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Qin M(秦明)
Adobe PDF(423Kb)  |  收藏  |  浏览/下载：1032/262  |  提交时间：2009/08/03
Modeling  Crystal Growth  Fluid Flow  Czochralski Growth  Ammonothermal Growth  Physical Vapor Transport  Transverse Magnetic-field  Physical-vapor Transport  Sic-bulk Growth  Silicon Czochralski Furnace  Thermal-capillary Analysis  Radiative Heat-transfer  Sublimation Growth  Numerical-simulation  Ammonothermal Growth  Oxygen Distribution  
Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals 期刊论文
Journal of Rare Earths, 2007, 卷号: 25, 页码: 345-348
作者:  Chen QS(陈启生);  Deng GY(邓谷雨);  Ebadian A;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(374Kb)  |  收藏  |  浏览/下载：755/190  |  提交时间：2009/08/03
Czochralski Growth  Flow Field  Temperature Distributions  Cusp Magnetic Field  
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
作者:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(228Kb)  |  收藏  |  浏览/下载：771/230  |  提交时间：2007/06/15
Growth Models  X-ray Diffraction  Growth From Vapor  Single Crystal Growth  Silicon Carbide  
Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method 期刊论文
Acta Mechanica Sinica, 2006, 卷号: 22, 期号: 1, 页码: 40-45
作者:  Zhang ZB(张自兵);  Lu J;  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(446Kb)  |  收藏  |  浏览/下载：838/212  |  提交时间：2007/06/15
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
作者:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V
Adobe PDF(228Kb)  |  收藏  |  浏览/下载：891/234  |  提交时间：2007/12/18